Design of RF to DC converter in 90nm CMOS technology for ultra-low power application

Jefferson A. Hora; Nieva M. Mapula; Emmanuel D. Talagon; Marnier B. Bate; Rovil S. Berido; Gene Fe P. Palencia

doi:10.1109/HNICEM.2015.7393175

Design of RF to DC converter in 90nm CMOS technology for ultra-low power application

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Jefferson A. Hora, Nieva M. Mapula, Emmanuel D. Talagon, Marnier B. Bate, Rovil S. Berido, Gene Fe P. Palencia

2016 8th International Conference on Humanoid, Nanotechnology, Information Technology, Communication and Control, Environment and Management, HNICEM 2015 Conference paper Cited by 3

Abstract

This paper presents an RF to DC converter circuit design implemented and simulated in 90nm 1P9M CMOS process technology. The system employs a voltage rectifier that converts a very low RF signal of up to -2.4dBm into a useable DC voltage. The converted DC voltage was stored in a battery with a protection circuit. The battery was then used as a supply voltage of the low dropout (LDO) regulator which is composed of a bandgap voltage reference circuit with an output voltage of 0.5V and an error amplifier with a gain of 74.9dB and phase margin of 62° that provides a stable system performance. The system yields a regulated output voltage of 0.9V. © 2015 IEEE.

Affiliations

Microelectronics Lab, EECE Department, MSU-Iligan Institute of Technology, Philippines; Department of Electrical and Electronics Engineering, University of San Carlos, Cebu City, Philippines

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