R. Montecillo, R.E.S. Otadoy, M.L.A.D. Lee, F.A. Buot, M.D. Nacar
The dependence on the quantum-well width of the characteristics of ultrafast (THz) current oscillations in resonant tunneling diode nanostructures is investigated through large-scale numerical simulations using non-equilibrium quantum transport equations. It is shown that decreasing the quantum-well width results to higher applied voltage biases in which intrinsic current oscillations occur. This can be attributed to higher resonant-energy level for narrower quantum-well widths requiring a large amount of applied voltage bias for the creation of emitter quantum-well whose coupling with the main quantum well allows the current oscillations to occur. In addition, there is no apparent trend in the relation between the amplitudes as well as the frequencies of oscillations and the quantum-well width. © 2017 Author(s).
Nanoelectronics Group, Theoretical and Computational Sciences and Engineering (TCSE) Center, Department of Physics, University of San Carlos, Talamban Campus, Talamban, Cebu City, 6000, Philippines; CandLB Research Institute, Carmen-Cebu, 6005, Philippines
